Steep-slope hysteresis-free negative capacitance MoS2 transistors
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چکیده
منابع مشابه
Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors
Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the representative is negative capacitance FET (NCFET), in which a ferroelectric layer is added within its gate stack. The other is phase FET (i.e., negative resistance ...
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It has been shown that a ferroelectric material integrated into the gate stack of a transistor can create an effective negative capacitance (NC) that allows the device to overcome "Boltzmann tyranny". While this switching below the thermal limit has been observed with Si-based NC field-effect transistors (NC-FETs), the adaptation to 2D materials would enable a device that is scalable in operati...
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The presence of a direct band gap and an ultrathin form factor has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulfide (MoS2) being the most studied representative of this family of materials. While diverse electronic elements, logic circuits, and optoelectronic devices have been demonstrated usin...
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ژورنال
عنوان ژورنال: Nature Nanotechnology
سال: 2017
ISSN: 1748-3387,1748-3395
DOI: 10.1038/s41565-017-0010-1